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KTC9012S-H-RTK/P Datasheet
Datasheet specifications
| Datasheet's name | KTC9012S-H-RTK/P |
|---|---|
| File size | 64.841 KB |
| File type | |
| Number of pages | 2 |
Download Datasheet KTC9012S-H-RTK/P |
Download Datasheet |
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Other documentations
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Technical specifications
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet: KEC Semicon KTC9012S-H-RTK/P
- Transistor Type: PNP
- Operating Temperature: +150°C@(Tj)
- Collector Current (Ic): 500mA
- Power Dissipation (Pd): 350mW
- Transition Frequency (fT): 150MHz
- DC Current Gain (hFE@Ic,Vce): 96@50mA,1V
- Collector Cut-Off Current (Icbo): 100nA
- Collector-Emitter Breakdown Voltage (Vceo): 30V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 100mV@100mA,10mA
- Package: SOT-23
- Manufacturer: KEC Semicon